Electronic structure of realistically extended atomistically resolved disordered Si:P delta-doped layers
نویسندگان
چکیده
منابع مشابه
Electronic structure of realistically extended atomistically resolved disordered Si : P δ - doped layers
Sunhee Lee,1,* Hoon Ryu,1,2,† Huw Campbell,3,‡ Lloyd C. L. Hollenberg,4 Michelle Y. Simmons,3 and Gerhard Klimeck1 1Network for Computational Nanotechnology (NCN), Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47906, USA 2Supercomputing Center, Korea Institute of Science and Technology Information (KISTI) 52-11 Eoeun-dong, Yuseong-gu, Daejeon 305-806, Republic of Korea...
متن کاملDevelopment of a Massively Parallel Nanoelectronic Modeling Tool and Its Application to Quantum Computing Devices
Lee, Sun Hee Ph.D., Purdue University, December 2011. Development of a Massively Parallel Nanoelectronic Modeling Tool and Its Application to Quantum Computing Devices . Major Professor: Gerhard Klimeck. The rapid progress in nanofabrication technologies has led to the possibility of realizing scalable solid-state quantum computers (QC) which have the potential to outperform conventional microp...
متن کاملEquilibrium Bandstructure of a Phosphorus δ-doped Layer in Silicon using a Tight-binding Approach
Emerging STM technology opens the possibility of creating ultra-high doped silicon devices. For the theoretical analysis of Si:P QW devices, an atomistic tight-binding approach with self-consistent potential calculation is used. Fermi-level, 1Γ, 2Γ and 1∆ bands are of the same order with previous studies. Impurity bands can be simply explained by the band projection of silicon bulk bandstructur...
متن کاملAtomistic modeling of metallic nanowires in silicon.
Scanning tunneling microscope (STM) lithography has recently demonstrated the ultimate in device scaling with buried, conducting nanowires just a few atoms wide and the realization of single atom transistors, where a single P atom has been placed inside a transistor architecture with atomic precision accuracy. Despite the dimensions of the critical parts of these devices being defined by a smal...
متن کاملElectronic structure of the trilayer cuprate superconductor Bi(2)Sr(2)Ca(2)Cu(3)O(10+delta).
The low-energy electronic structure of the nearly optimally doped trilayer cuprate superconductor Bi(2)Sr(2)Ca(2)Cu(3)O(10+delta) is investigated by angle-resolved photoemission spectroscopy. The normal state quasiparticle dispersion and Fermi surface and the superconducting d-wave gap and coherence peak are observed and compared with those of single- and bilayer systems. We find that both the ...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2017